Using N2+ Implantation into Poly-Si/a-Si Films to Improve the Thermal Stability of Cobalt Silicide
碩士 === 國立交通大學 === 電子物理系 === 87 === Due to its low resistivity and better chemical stability, CoSi2 is more anticipated to be the silicide material of deep sub-micrometer dimension CMOS devices. However, CoSi2 films on polysilicon would be decomposed and agglomerated during post-formation...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04536741022007457422 |