The Processing Discuss of High TCR Molybdenum Siliside
碩士 === 國立交通大學 === 電子物理系 === 87 === This thesis tends to search for a high Temperature Coefficient of Resistance(TCR) film. According to match the Process in IC and the value of MoSi2 is highest among of all siliside in the research of others before, we choose MoSi2 as the film for studyi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95438458423504304374 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 87 === This thesis tends to search for a high Temperature Coefficient of Resistance(TCR) film. According to match the Process in IC and the value of MoSi2 is highest among of all siliside in the research of others before, we choose MoSi2 as the film for studying. After studying, we can find that the highest TCR value of MoSi2 can be up to 0.3%/℃, and we are also able to make it reproducible. At last, we discuss about how to change the process in order to get higher value of TCR.
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