The Processing Discuss of High TCR Molybdenum Siliside
碩士 === 國立交通大學 === 電子物理系 === 87 === This thesis tends to search for a high Temperature Coefficient of Resistance(TCR) film. According to match the Process in IC and the value of MoSi2 is highest among of all siliside in the research of others before, we choose MoSi2 as the film for studyi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95438458423504304374 |