Analysis and Characterization of the Band-to-Band Tunneling Effects and Their Applications in P-flash Memory Design
碩士 === 國立交通大學 === 電子工程系 === 87 === At the beginning, we measure the off-state current of the MOS device under different temperatures to make sure the physical mechanism, then we analyze the model of band-to-band tunneling current. Because the former one-dimensional band-to-band tunneling...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11391453554677374593 |