The effects of process parameters on TEOS interpoly dielectrics characteristics
碩士 === 國立交通大學 === 電子工程系 === 87 === Recently, it is reported that more reliable dielectrics grown on the polysilicon can be obtained by using deposited instead of thermally grown dielectrics. Since defects located in the polysilicon are not incorporated into the deposition dielectric and t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76659124467277248855 |