The Effect of Hydrogen on MOCVD Grown HBT Device

碩士 === 國立交通大學 === 電子工程系 === 87 === In this thesis,we focus on the transient phenomenon which only show up on virgin device of MOCVD (metal-organic chemical vapor deposition) grown HBT (hetero-junction bipolar transistor). Because there is no way to inhibit hydrogen from incorporating with...

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Bibliographic Details
Main Authors: Yu-Chen Yu, 余昱辰
Other Authors: Chien-Pin Lee
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/40764627427575773388