The Effect of Hydrogen on MOCVD Grown HBT Device
碩士 === 國立交通大學 === 電子工程系 === 87 === In this thesis,we focus on the transient phenomenon which only show up on virgin device of MOCVD (metal-organic chemical vapor deposition) grown HBT (hetero-junction bipolar transistor). Because there is no way to inhibit hydrogen from incorporating with...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1999
|
Online Access: | http://ndltd.ncl.edu.tw/handle/40764627427575773388 |