Thermal Stability of Cu/PAE-2(low k)/Si with and without Ta-based Barrier Layers

• Main Authors: Chau-Chiung Wang, 王超群
• Other Authors: Mao-Chieh Chen
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/51448599349551030494

碩士 === 國立交通大學 === 電子工程系 === 87 === This thesis investigates the thermal stability and electrical properties of the low-k dielectric material of PAE-2 film. The dielectric constant of the PAE-2 film was determined to be 2.9 and the PAE-2 film was thermally stable up to 450oC. The thermal stability of the Cu/PAE-2/Si system is up to 200oC and the effects of Ta and TaN diffusion barrier sandwiched between Cu and PAE-2 layer were investigated using the technique of I-V measurement. It is found that the use of Ta and TaN barriers raised the thermal stability temperature of the system by 200 and 250oC, respectively. Thermal stability of the Cu/PAE-2/SiO2/Si structure was also investigated using the technique of C-V measurement and the bias temperature stress (BTS). It is found that large amount of positive and negative mobile ions were presented in the PAE-2 layer, causing large voltage shift of the C-V curve after BTS stress. Material analyses of SEM, SIMS, XRD, and TDS measurement were used to investigate the degradation mechanism of these MIS capacitors.