Numerical Simulation and Characterization of SILC in Oxides
碩士 === 國立交通大學 === 電子工程系 === 87 === The mechanisms and transient characteristics of edge FN and uniform FN stress induced leakage current (SILC) in tunnel oxides are investigated. A correlation between stress induced gate current and substrate current in a n-MOSFET is observed. A numercal...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31163048883823884984 |