A Planar-Gate GaAs Power MESFET's Using Double Ion-Implantation for Wireless Communications
碩士 === 國立交通大學 === 材料科學與工程系 === 87 === The power MESFET by double implantation with a planar-gate has been developed. The doping profile of the ion-implantation was optimized to obtain good device performance. The structure design principles, the device processes and the RF performances of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18495664315391815231 |