Investigation of High-Barrier-Gate and Multiple-Channel Structure Heterojunction Field-Effect Transistors
碩士 === 國立成功大學 === 電機工程學系 === 87 === A high-barrier-gate and multiple-channel structure heterojunction field-effect transistor has been successfully fabricated and demonstrated. A very thin and heavily doped p+-GaInP layer is introduced to enhance high gate turn-on and breakdown voltage an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89437700956749860677 |