真空蒸鍍熱氧化法製備氧化鎵薄膜氣體感測器之研究
碩士 === 國立成功大學 === 化學工程學系 === 87 === Ga2O3 possesses an N-type semiconductor characteristic, is stable at high temperature and being applied in detecting reducing gas recently. In the present study, Ga2O3 thin film was prepared by vacuum deposition following with thermal oxidation. The effects of pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07548838295963689742 |