2-D Simulation of the Small-Signal Circuit Parameters Analysis and Large-Signal Behavior for GaAs MESFET's
碩士 === 國立中興大學 === 電機工程學系 === 87 === Abstract 2-D semiconductor device simulations are used to study uniform doped GaAs MESFETs in this thesis. The primary function of simulations is to solve the basic governing equations in a self —consistent way and obtain the electrost...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60257119677477836233 |