Cobalt Salicided Ultra Shallow Junction Formation Technologies for ULSI Applications
碩士 === 逢甲大學 === 電機工程學系 === 87 === Several methods for forming cobalt salicided p+/n ultra shallow junction have been studied. The application for p+/n shallow junction formed with low energy ion implantation was first investigated in the thesis. The shallower doping profiles were obtained by the low...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68191083942091798468 |