nvestigations of nitride films and GaN/InGaN heterostructures grown on sapphire or silicon substrates
碩士 === 逢甲大學 === 材料科學學系 === 87 === Nitride films and GaN/InGaN heterostructures were grown on sapphire or silicon substrates. MOCVD-grown n-GaN and p-GaN show electron and hole concentration of ~1018 cm-3 and ~1017 cm-3, respectively. Both n-GaN and p-GaN tend to release strain by introduc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54692045635543781594 |