Study on the growth and characterization of InAsSbP homojunction diodes by liquid phase epitaxy
碩士 === 中原大學 === 電子工程學系 === 87 === Abstract InAsSbP quaternary alloys lattice-matched to InAs substrate are promising materials for 2-4um wavelength optical sources. By using a supercooling technique of LPE, quaternary alloys of InAsSbP are successfully grown on...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38616407733970516441 |