Investigation of The Scaling HBT's Using Carrier Confinement and Passivation Layers
碩士 === 國立海洋大學 === 電機工程學系 === 86 === In this thesis, we present two kind layers, passivation and carrier confinement layers of HBT. First, we report on the fabrications and characterizations of the InGaP/GaAs d-doped single heterojun...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70126026537602767254 |