A Study on Reliability of Ultra-thin Gate Oxide in MOS Devices for ULSI Applications
碩士 === 國立清華大學 === 電機工程研究所 === 86 === In this thesis, four types of devices are fabricated:NMOS and PMOS with 4-nm gate-oxide grown in either O2 or NO2 atmosphere. Gate leakage current, threshold voltage shift, mobility degradation, oxidetrapped charge(Qot) and interface-trapped charge (Qit) gener...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/05753940326306732380 |