A New Etching Mask Ta2O5 for Bulk Si Dissolved Processes
碩士 === 國立中山大學 === 光電工程學研究所 === 86 === A new etching mask Ta2O5 for bulk Si dissolved processes is presented .The Ta2O5 dielectric films were formed by magnetron RF sputtering technique on Si substrate. After deposition, the sample were etched in hot E.D.P. solutions. The E.D.P. etchants e...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57889934678431252524 |
| Summary: | 碩士 === 國立中山大學 === 光電工程學研究所 === 86 === A new etching mask Ta2O5 for bulk Si dissolved processes is presented .The Ta2O5 dielectric films were formed by magnetron RF sputtering technique on Si substrate. After deposition, the sample were etched in hot E.D.P. solutions. The E.D.P. etchants etched the substrate at a high rate (~90 mm/hour) . The etching process was tested with different thickness of Ta2O5 . The samples with 5000* Ta2O5 etching mask can last for more than four hours in the E.D.P. solutions. The roughness is about 90* after fourhours of etching. Besides, we successful fabricated two dimensional and three dimensional micro structures. The micro-cavity with Ta2O5 mirror was fabricated using micro-maching technologies on the Si substrate.
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