A New Etching Mask Ta2O5 for Bulk Si Dissolved Processes
碩士 === 國立中山大學 === 光電工程學研究所 === 86 === A new etching mask Ta2O5 for bulk Si dissolved processes is presented .The Ta2O5 dielectric films were formed by magnetron RF sputtering technique on Si substrate. After deposition, the sample were etched in hot E.D.P. solutions. The E.D.P. etchants e...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57889934678431252524 |