The SEM Analysis on Annealed Au Thin Films Deposited on Porous Silicon at Different Temperature
碩士 === 國立中山大學 === 物理學系 === 86 === Annealing effect of Au thin films on porous silicon has been studied by in-sitil measurement of conductivity during annealing. We found that resistance changes at 100℃, 150℃, 180℃, 200℃. In order to understand the conducting transition and silicide formation...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/15156181496839756597 |