Electrical Characteristic Measurement of GaN
碩士 === 國立交通大學 === 電子物理系 === 86 === We has successfully grown the GaN film using metalorganic chemical phase deposition method. From the Van der Pauw and Hall measurement, it is found that the GaN film quality is very sensitive to the growth conditions, such as buffer layer thickness, ramping rate...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77249529553401108009 |