Thermodynamic analyis on the MOVPE Growth of InGaN

• Main Authors: Yang, Sheng-Bi, 楊盛筆
• Other Authors: Chen, Wei-Kuo
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/93496821211524663248

碩士 === 國立交通大學 === 電子物理系 === 86 === 　　We have carried out a thermodynamic model for metalorganic vapor phase epitaxial (MOVPE) growth of InGaN tenary Using the conventional model without any modification, the InGaN solid composition is found to be independent of growth temperature, contrary to the results observed from InGaN MOVPE growth, such as difficulty of In incorporation at high growth temperatures. Because of this, Koukitu et al. introduced an ammonia parasitiic reaction to describe the growth of InGaN.However, no evidence of this reaction has been discovered for InGaN, which indicative of imperfection of Koukitu model. 　　In our InGaN thermodynamic growth model, a high-temperature parasistic rerasitio reaction of In, such as high temperature effect and In droplet formation, instead of parasitionreaction of NH3 was used to express the low In incorporation efficiency and formation of In droplets for InGaN. It is found that our model can give a better description of InGaN MOVPE growth, and more importantly it takes into the account of In droplet formation so that a high-quality of InGaN without any metal droplets on the surface can be easily obtained in our InGaN growth.