Thermodynamic analyis on the MOVPE Growth of InGaN

碩士 === 國立交通大學 === 電子物理系 === 86 ===   We have carried out a thermodynamic model for metalorganic vapor phase epitaxial (MOVPE) growth of InGaN tenary Using the conventional model without any modification, the InGaN solid composition is found to be independent of growth temperature, contrary to the r...

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Bibliographic Details
Main Authors: Yang, Sheng-Bi, 楊盛筆
Other Authors: Chen, Wei-Kuo
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/93496821211524663248