The Study of Defects in Te-doped AlInP
碩士 === 國立交通大學 === 電子物理系 === 86 === Deep level transient spectroscopy measurements were performed to study the defects in Te-doped AlInP, grown by MOCVD. By using pn junction structure, both minority and majority carrier traps can be observed. Here, the V/III mole ratio effect and Te-doping concen...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1998
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Online Access: | http://ndltd.ncl.edu.tw/handle/97579322187263592380 |