The Study of Defects in Te-doped AlInP

碩士 === 國立交通大學 === 電子物理系 === 86 ===   Deep level transient spectroscopy measurements were performed to study the defects in Te-doped AlInP, grown by MOCVD. By using pn junction structure, both minority and majority carrier traps can be observed. Here, the V/III mole ratio effect and Te-doping concen...

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Bibliographic Details
Main Authors: Sung, Wei-Jer, 宋維哲
Other Authors: Lee, Wei-I
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/97579322187263592380