| Summary: | 碩士 === 國立交通大學 === 材料科學與工程研究所 === 86 ===
In this work we studied the via formation in Du Pont PI-2555 Polyimide by employing the wet chemical etching and reactive ion etching (RIE) processes.
Experimental results indicated that wet etching was a very fast (etching rate≡0.17∼1.08um/sec), simple, and low-cost technique. However, it exhibited serious via undercut and load effect due to its isotropic etching nature (the degree of isotropy≡0.3∼0.4).
RIE si a pleasma-based dry etching technique characterized by a combination of physical sputtering and chuemical etching. RIE offfered good control of etching profile when processiong variables were carefully selected. The degree of anisotropy was 0.7∼0.92 varied with etching conditions. The disadvantages of RIE would be its complexity that an optimum etching conditions was very difficult to establish. Comparing with wet etching, RIE process had a very low etching rate (0.02∼0.67um/min), but the load effect was less serious.
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