Si and GaAs PIN Photodiode Fabrication and Characterrization
碩士 === 國立交通大學 === 光電工程研究所 === 86 === In this thesis, we present the fabrication of 0.85um Si and GaAs PIN photodiode. Planar Si PIN photodiode is fabricated by POCL3 diffusion on P-P+ epitaxial wafer. The mesa structure is used in the GaAs PIN photodiode with AlGaAs/GaAs heterojunction. Character...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23659633520810128471 |