Core level photoemission study of phosphorus groeth on Si(100) by chemical vapor deposition from phosphine
碩士 === 國立交通大學 === 物理研究所 === 86 === Phosphine is a molecule widely used in chemical vapor deposition (CVD)procession for n0type doping of silicon. So it is important to understand growth kinetics. The interaction of phosphine with the Si(10...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46757267427087160162 |