A study of reactive ion etching for the fabrication of heterojunction bipolar transistors and laser diodes

• Main Authors: Juang, Ying-Zung, 莊英宗
• Other Authors: Yan-Kuin Su, Shoou-Jinn Chang
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/51857556967652744317

博士 === 國立成功大學 === 電機工程學系 === 86 === Reactive ion etching is the most important technology to thesemiconductor industry. Since, it is needed to reduce the device dimension for VLSI and ULSI technology, anisotropic etchingprocess is very important technique for pattern transfer. The equipment of reactive ion etching is simple. The resultof anisotropic etching is caused by ion bombardment. Furthermore,we could obtain the results of smooth surface, selective etching, andthe control of profile through dry etching process. Therefore, itbecome easier for device fabrication. The disadvantages of reactiveion etching are the residual on etching surface and surface damagecaused by ion bombardment. The damage layer will degrade theoptical performance of laser diodes and induce more surface leakagecurrent. Furthermore, better ohmic contact is hard to be fabricatedsince the residual will increase the specified contact resistance.Therefore, if the RIE were used for device fabrication, how to removethe residual and damage layer is very important. We have studied the reactive ion etching of (Al)GaInP/GaAsmaterial system for the fabrication of heterojunction bipolar transistors(HBTs) and laser diodes. We could fabricate the device using all dryetching method. Compare with the result of wet chemical etching, theHBT fabricated by RIE with higher current gain (28) than wet chemicaletching device (22). The ridge type index-guided laser diode fabricatedby RIE with smaller threshold current (27mA) than the gain-guidedlaser diode (31mA).