| Summary: | 博士 === 國立成功大學 === 電機工程學系 === 86 === Reactive ion etching is the most important technology to
thesemiconductor industry. Since, it is needed to reduce the
device dimension for VLSI and ULSI technology, anisotropic
etchingprocess is very important technique for pattern transfer.
The equipment of reactive ion etching is simple. The resultof
anisotropic etching is caused by ion bombardment. Furthermore,we
could obtain the results of smooth surface, selective etching,
andthe control of profile through dry etching process.
Therefore, itbecome easier for device fabrication. The
disadvantages of reactiveion etching are the residual on etching
surface and surface damagecaused by ion bombardment. The damage
layer will degrade theoptical performance of laser diodes and
induce more surface leakagecurrent. Furthermore, better ohmic
contact is hard to be fabricatedsince the residual will increase
the specified contact resistance.Therefore, if the RIE were used
for device fabrication, how to removethe residual and damage
layer is very important. We have studied the reactive ion
etching of (Al)GaInP/GaAsmaterial system for the fabrication of
heterojunction bipolar transistors(HBTs) and laser diodes. We
could fabricate the device using all dryetching method. Compare
with the result of wet chemical etching, theHBT fabricated by
RIE with higher current gain (28) than wet chemicaletching
device (22). The ridge type index-guided laser diode
fabricatedby RIE with smaller threshold current (27mA) than the
gain-guidedlaser diode (31mA).
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