Study on Paralleled Characteristics of Power Switches

• Main Authors: Lin, C. H., 林家弘
• Other Authors: J. F. Chen
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/92377823617946328868

碩士 === 國立成功大學 === 電機工程學系 === 86 === Because driving easily , Power MOSFETs (Mental-Oxide- Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have become the most popular power switching devices for power electronic applications . They show all of their advantages optimally , especially those where high switching speeds are important . For various kinds of power supply systems , besides increasing system capacity , how to operate at higher efficiency and switching frequency is an important subject , and the above associated with power switches directly . In high power applications , we often reach the goal by paralleling the swiching devices . In this thesis , a chopper circuit used to analyze the characteristics of the IGBTs and MOSFETs , and discuss the considerations of the circuit design when switching devices are paralleled . Finally , a 1.5kilowatt single-phase inverter has been built , using these two power switches,by different paralleled types , switching frequencies and output power ratings ,comparing the efficiency of the inverter to discuss the effect of the switchingdevices characteristics .