Study on Paralleled Characteristics of Power Switches

碩士 === 國立成功大學 === 電機工程學系 === 86 === Because driving easily , Power MOSFETs (Mental-Oxide- Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have become the most popular power switching devices for power electronic appl...

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Bibliographic Details
Main Authors: Lin, C. H., 林家弘
Other Authors: J. F. Chen
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/92377823617946328868