Reactive sputtering TiAlN films applied as a diffusion barrier between copper and silicon
碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === (Ti,Al)N films have been grown onto Si(100) by d.c. reativemagnetron sputtering from a titanium-aluminum alloy target atdifferent nitrogen partial pressure. (Ti,Al)N films about100nm thick were used as diffusion bar...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82549230727842166508 |
| Summary: | 碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === (Ti,Al)N films have been grown onto Si(100) by d.c.
reativemagnetron sputtering from a titanium-aluminum alloy
target atdifferent nitrogen partial pressure. (Ti,Al)N films
about100nm thick were used as diffusion barriers between
siliconsubstrates and thin copper films. Sheet resistance
measurement,scanning electron microscopy and Auger electron
spectropy indicated the absence of the interdiffusion and
structrual change for unpatterned Si/TiAlN/Cu samples annealing
from 400C to 700C in H2 for 30 min.
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