Reactive sputtering TiAlN films applied as a diffusion barrier between copper and silicon

碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === (Ti,Al)N films have been grown onto Si(100) by d.c. reativemagnetron sputtering from a titanium-aluminum alloy target atdifferent nitrogen partial pressure. (Ti,Al)N films about100nm thick were used as diffusion bar...

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Bibliographic Details
Main Authors: Tasi, wei-kung, 蔡維恭
Other Authors: Jow-Lay Huang
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/82549230727842166508