Study of Nickel-Silicon Reaction by In Situ Stress Measurement
碩士 === 國立中興大學 === 材料工程學研究所 === 86 === Metal silicides have been widely used as ohmic contacts, gate electrodes, and interconnects in high－speed deep submicron CMOS devices. NiSi is a possible candidate as next generation silicide material due to its low s...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/73146135297474287005 |