The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition
碩士 === 輔仁大學 === 物理學研究所 === 86 === In our work, we synthesize ZnS thin films containing 5% Mn by Double Ion Sources Enhancing Electron Beam Deposition. Using the insulator material SiO2, and Ta2O5, an electrode Ti by R.F. Sputter, is necessary to fabricate an ACTFEL display device. From results m...
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31001461398933612667 |
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ndltd-TW-086FJU031980052015-10-13T11:03:30Z http://ndltd.ncl.edu.tw/handle/31001461398933612667 The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition 以雙離子源輔助電子束蒸鍍製作交流電激光發光薄膜元件 管台強 碩士 輔仁大學 物理學研究所 86 In our work, we synthesize ZnS thin films containing 5% Mn by Double Ion Sources Enhancing Electron Beam Deposition. Using the insulator material SiO2, and Ta2O5, an electrode Ti by R.F. Sputter, is necessary to fabricate an ACTFEL display device. From results mentioned above, an ACTFEL display device with Glass/ITO/SiO2/Ta205/ZnS+Mn(5%)/SiO2/Ta2O5/Ti structure has been fabricated. The substrate area is 76x25 mm2 and the effective area is 20x8 mm2 The substrate area is 38x25 mm2 and the effective area is 10x8 mm At lk Hz square wave excitation voltage, the threshold voltage of the device is 17OV. 凌國基 1998 學位論文 ; thesis 68 zh-TW |
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NDLTD |
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zh-TW |
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碩士 === 輔仁大學 === 物理學研究所 === 86 === In our work, we synthesize ZnS thin films containing 5% Mn by Double Ion Sources Enhancing Electron Beam Deposition. Using the insulator material SiO2, and Ta2O5, an electrode Ti by R.F. Sputter, is necessary to fabricate an ACTFEL display device.
From results mentioned above, an ACTFEL display device with Glass/ITO/SiO2/Ta205/ZnS+Mn(5%)/SiO2/Ta2O5/Ti structure has been fabricated. The substrate area is 76x25 mm2 and the effective area is 20x8 mm2 The substrate area is 38x25 mm2 and the effective area is 10x8 mm At lk Hz square wave excitation voltage, the threshold voltage of the device is 17OV.
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| author2 |
凌國基 |
| author_facet |
凌國基 管台強 |
| author |
管台強 |
| spellingShingle |
管台強 The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| author_sort |
管台強 |
| title |
The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| title_short |
The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| title_full |
The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| title_fullStr |
The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| title_full_unstemmed |
The Fabrication of ACTFEL Device by Double Ion Sources Enhancing Electron Beam Deposition |
| title_sort |
fabrication of actfel device by double ion sources enhancing electron beam deposition |
| publishDate |
1998 |
| url |
http://ndltd.ncl.edu.tw/handle/31001461398933612667 |
| work_keys_str_mv |
AT guǎntáiqiáng thefabricationofactfeldevicebydoubleionsourcesenhancingelectronbeamdeposition AT guǎntáiqiáng yǐshuānglíziyuánfǔzhùdiànzishùzhēngdùzhìzuòjiāoliúdiànjīguāngfāguāngbáomóyuánjiàn AT guǎntáiqiáng fabricationofactfeldevicebydoubleionsourcesenhancingelectronbeamdeposition |
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1716835569329242112 |