| Summary: | 碩士 === 逢甲大學 === 電機工程研究所 === 86 === In the thesis, the BF2+ implanted ( 30keV, 5E15cm-2 ) single
layerpolysilicon (100nm) and stacked-double-layer polysilicon
(50+50nm)were used as the solid diffusion sources for forming
ultra shallow p+/njunction and the junction depth as shallow as
0.036um was obtained by950C, 15sec RTA thermal treatment. In
addition, excellent electrical performance such as reverse
leaking current density as low as 1nA/cm2, ideality factor
approach to 1, and 1.06eV activation energy were performed by
850C, 30min furnace annealing for Al-contacted p+/n junctions.
The cobalt polycide films with the stacked polysilicon buffer
layer show the better thermal stability than that with single
layer polysilicon, and the sheet resistance of 70nm cobalt
polycide films remain nearly constant until 1000C. In addition,
excellent reverse leaking current density as low as 0.08nA/cm2
were formed by 900C, 30min furnace annealing. It is supposed to
that the cobalt polycide films with stacked polysilicon scheme
give smaller CoSi2 grain size and more smooth CoSi2/polysilicon
interface.
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