Co-Silicide Ultra Shallow Junction for Deep Submicron Devices by Using A Stacked Poly-Si Buffer Layer as the Solid Diffusion Source
碩士 === 逢甲大學 === 電機工程研究所 === 86 === In the thesis, the BF2+ implanted ( 30keV, 5E15cm-2 ) single layerpolysilicon (100nm) and stacked-double-layer polysilicon (50+50nm)were used as the solid diffusion sources for forming ultra shallow p+/nju...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81223730805904594232 |