The Effect of Interfacial Praseodymium Thin Film on GaAs MESFET Characteristics
碩士 === 長庚大學 === 電機工程研究所 === 86 === In this thesis, enhancement of Schottky barrier height and reduction of junction leakage current of the Al / n-type GaAs Schottky diode was obtained using an interfacial Pr thin layer. The effects of Pr thickness, final a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36664650578071961546 |