| Summary: | 碩士 === 國立中正大學 === 化學工程研究所 === 86 === Thermal processing plays an important role of integrated
circuit fabrication.
It not only supplies the high temperature but also removes the defects using
thermal annealing process. In recent years, the devices tend toward reduction
of size in order to obtain fast speed and higer packing density. The
conventional furnace has a high thermal budget. Such a high thermal budget
processing causes impurity/dopant reflow influencing the quality due to its
long processing times. With the capability of performing heat cycles quickly
and having low thermal budgets, rapid thermal processing has the potential to
replace conventional furnace.
The equipment of RTP system involves a lamp system in which tungsten-halogen
point sources are configured in concentric rings to provide a circularly
symmetric intensity profile. Both temperature distribution nonuniformity of the
steady state and thermal stress of the transient state are main drawbacks in
rapid thermal processing, therefore we must simultaneously consider both
problems to solve such a RTP optimization problem. In this study, in order to
improve temperature distribution uniformity for steady state, we use an
independently controlled lamp at wafer edge and implement optimal chamber
design at the same time. During the ramping up period, the continuously dynamic
adaptation for the intensity profile is required to eliminate the thermal
stress. Finally, we also use the same method to fulfill temperature control
during the cooling down period and finish the overall cycle of ramping up-
steady state-cooling down of RTP.
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