應用原子力顯微鏡量測養金氧半場效電晶體閘極長度
碩士 === 中正理工學院 === 電機工程研究所 === 86 === The purpose of this thesis is to verify the gate length of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by using the Atomic Force Microscope (AFM) which can have dimensional resolution down to the atomic o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23514626534620345321 |