An Investigation of High Dielectric Constant of RF-sputtered HfO2 Thin Films

碩士 === 國立雲林科技大學 === 電子與資訊工程技術研究所 === 85 ===   In this thesis, the Hafnium dioxide (HfO2) thin films are deposited on p-Si substrates by the radio-frequency(RF) magnetron sputtering system. The material and electric properties of the deposited HfO2 films before and after annealing process are studie...

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Bibliographic Details
Main Authors: Yeh, Chang-Moun, 葉長茂
Other Authors: Chen, Shih-Chih
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/62974981089214242913