A Study of Oxide Charge Effect on MOS Reliability and Its Application on RTA Damage
碩士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === Rapid thermal annealing (RTA) is widely used in deep submicrontechnology, for damage annealing and formation of shallow junctionand super steep doping profile. Since its high temperature gradie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08792623292713061787 |