The Effect of Susceptor on The Thickness Uniformity and Electrical Characteristics of Rapid Thermal Oxides
碩士 === 國立臺灣大學 === 電機工程學系 === 85 === As the dimension of devices in ULSI shrinks, in order to minimize the dopantredistribution or grow thin gate oxides, rapid-thermal processing(RTP) become amore and more important technology nowadays based on rapid heati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57211566828011933720 |