Investigation of The InGaP/GaAs/InGaP Delta-Doped Heterojunction Bipolar Transistors
碩士 === 國立海洋大學 === 電機工程學系 === 85 === In this thesis, we report on InGaP/GaAs/InGaP double- heterojunction bipolar transistors with a delta-doped sheet located at the emitter-base and the base-collector heterointerfaces, respectively. Both th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57573277845258339002 |