Formation of Self-Aligned TiSi2 on (001)Si inside 0.1-0.6μm Oxide Openings Prepared by Electron Beam Lithography
碩士 === 國立清華大學 === 材料科學工程學系 === 85 === The effects of substrate heating and preamorphization on the formation of self-aligned TiSi2 on (001)Si in both large-area wafers and inside 0.1-0.6μm oxide openings of patterned wafers have been investigated by scanning electron microscopy (SEM), transmiss...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67870510232188111525 |