Electron Beam Direct Writing Lithography Process and Formation of NiSi2, CoSi2 inside Deep Submicron Size Oxide Openings
博士 === 國立清華大學 === 材料科學與工程學研究所 === 85 === The formation of NiSi2 and CoSi2 on silicon inside 0.1-0.6 μm oxide openings prepared by electron beam lithography has been investigated by transmission electron microscopy, field emission scanning electron microscopy, auger electron spectroscope, thin films...
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| Format: | Others |
| Language: | en_US |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44072277420829930981 |