Simulation of Deep Submicron N-Channel Metal-Oxide-Semiconductor Device with One-Dimensional Balance Equations
碩士 === 國立中山大學 === 電機工程學系 === 85 === This paper presents a numerical model for deep submicron MOS devices using balance equations. For a deep submicron device, the electron temperature may be much higher than lattice temperature. We need to modify the conventional mobility model incorporating...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54214428019931820192 |