The Application of Reactive-Ion-Etching in InAlAs and InGaAs Compounds
碩士 === 國立中央大學 === 電機工程學系 === 85 === The main purpose of our study in this thesis is to investigate a new kind of RIE etchant,and apply this new gas mixture for gate- recess etching in InP-basedHEMT fabrication.There are four kinds of gas mi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35348721207126278819 |