| Summary: | 碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === Conducting transparent films of tin oxide and amorphous silicon
films were deposited by radio frequency plasmas enhanced
chemical vapor deposition method. The main goal is to
promote the solar cell efficiency by minimize the thickness of
silicon oxide between tin oxide and amorphous silicon
films. In order to minimize the interface oxide
thickness, amorphous silicon films were deposited on tin oxide/
glass at room temperature. First, tin oxide films were
deposited on glass substrates. The optimum operating
conditions for tin oxide films growth are rf power = 33 watts,
PTMT = 20 mtorr, PO2 = 20 mtorr and D = 19 cm. The TO films
exhibits resistance = 791 W-cm and the average
transmittance in visible region = 85 %. Second, by amorphous
silicon films were deposited on TO/glass. Under rf power =
70 watts, PSiH4 = 15.6 mtorr, PH2 = 15 mtorr and PAr = 25 mtorr;
amorphous silicon films with microcrystals can be deposited.
It can be expected the interface oxide thickness will be
minimized by radio frequency plasmas enhanced chemical
vapor deposition method at room temperature. So the result of
this research is proved to promote the solar cell efficiency.
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