Study of Arsenic-implanted GaAs by Photoreflectance Spectroscopy
碩士 === 國立交通大學 === 電子物理學系 === 85 === In this work, We study the mechanism of photoreflectance(PR) spectroscopy by probing the high-dosage As-implanted GaAs substrate. The samples have a very short carrier life-time about a pico second. As the concentration...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08032200001179986468 |